Expérimental
Recently bidimensional (2D) van der Waals (vdW) III−VI semiconductors have drawn intense attention due to their unique electronic properties. Among these materials, In2Se3 in its most studied α phase, shows a great potential for a wide variety of applications in electronics, photonics and even thermoelectricity, due to its good mobility, excellent photoresponsivity, exotic ferroelectricity, and unique band structure. First-principles calculations based on the density functional theory and Boltzmann transport theory show that monolayered α-In2Se3 is also a great candidate for high-performance thermoelectric materials with the power factor PF and the figure of merit ZT as high as 0.02W/mK2 and 2.18 at room temperature4. The main goal of the internship is to go a step forward in the investigation of the correlation between thermoelectric and ferroelectric properties of α-In2Se3 thin layer. The student will fabricate α-In2Se3 based transistors for electric and thermoelectric investigation. The activity will cover sample fabrication in clean room (dry transfer of the 2D material, e-beam lithography, etching, metal deposition, AFM/Raman analysis …) and electrical measurements in a multi-probe station as a function of the temperature. The team has a strong expertise in the investigation of charge and spin transport in 2D materials and in clean room micro and nano fabrication techniques. This expertise will be exploited in the project.